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NTJD2152PT4G Fa'amatalaga Fa'atekinolosi

MOSFET 2P-CH 8V 0.775A SOT-363

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC -8V
Terminal Form GULL WING
Current Rating -775mA
Base Part Number NTJD2152P
JESD-30 Code R-PDSO-G6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 300m Ω @ 570mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 8V
Rise Time 23ns
Turn-Off Delay Time 50 ns
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.3Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 270mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 270mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 775mA
Drain Current-Max (Abs) (ID) 0.775A
Drain to Source Breakdown Voltage -8V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
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