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NTF3055-100T1G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 110MOhm
Voltage - Rated DC 60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 9.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Ta
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Threshold Voltage 3V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 9A
Nominal Vgs 3 V
Length 6.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 3A
Pin Count 4
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Height 1.65mm
Width 3.7mm
REACH SVHC No SVHC
Lead Free Lead Free
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