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NTDV20N06LT4G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 48m Ω @ 10A, 5V
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±15V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 15V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 128 mJ
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.36W Ta 60W Tj
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Ta
Rise Time 98ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Fall Time (Typ) 62 ns
Continuous Drain Current (ID) 20A
Drain-source On Resistance-Max 0.048Ohm
DS Breakdown Voltage-Min 60V
Radiation Hardening No
Lead Free Lead Free
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