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NTD6414AN-1G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Rail

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 32A Tc
Rise Time 52ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Gate to Source Voltage (Vgs) 20V
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Resistance 37MOhm
Subcategory FET General Purpose Power
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 37m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 32A
Drain to Source Breakdown Voltage 100V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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