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NTD5803NT4G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 40V 76A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 76A Tc
Rise Time 21.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 28.3 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.2m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 6.6 ns
Continuous Drain Current (ID) 76A
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 228A
Lead Free Lead Free
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