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NTD4863N-1G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 25V 9.2A IPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.27W Ta 36.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.2A Ta 49A Tc
Rise Time 16.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 20.2 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 60.5 mJ
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.95W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 16.5 ns
Continuous Drain Current (ID) 8.6A
Drain Current-Max (Abs) (ID) 9.2A
Pulsed Drain Current-Max (IDM) 98A
RoHS Status RoHS Compliant
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