NTD4302-1G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 8.4A IPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 30V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 68A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 28A
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 68A
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.04W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.4A Ta 68A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 722 mJ
Lead Free Lead Free
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