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NTD3055L170-1G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 60V 9A IPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 9A
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.5W Ta 28.5W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Ta
Rise Time 69ns
Vgs (Max) ±15V
Turn-Off Delay Time 10 ns
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.17Ohm
Pulsed Drain Current-Max (IDM) 27A
Nominal Vgs 1.7 V
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 28.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status RoHS Compliant
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