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NTA4153NT1G Fa'amatalaga Fa'atekinolosi

NTA4153NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 127mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Power Dissipation-Max 300mW Tj
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 915mA Ta
Rise Time 4.4ns
Vgs (Max) ±6V
Turn-Off Delay Time 25 ns
Threshold Voltage 760mV
Drain to Source Breakdown Voltage 20V
Height 800μm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SC-75, SOT-416
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Terminal Position DUAL
Current Rating 915mA
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 915mA
Gate to Source Voltage (Vgs) 6V
Nominal Vgs 760 mV
Length 800μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "NTA41"   vaega

O vaega nei e aofia ai  'NTA41' 

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