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NSVT65011MW6T1G Fa'amatalaga Fa'atekinolosi

ON SEMICONDUCTOR - NSVT65011MW6T1G - Bipolar Transistor Array, Dual NPN, 65 V, 380 mW, 100 mA, 300 hFE, SOT-363

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature -55°C~150°C TJ
Published 2015
Part Status Active
Max Power Dissipation 380mW
Power - Max 380mW
Collector Emitter Voltage (VCEO) 600mV
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Max Breakdown Voltage 65V
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 6
Packaging Cut Tape (CT)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Polarity NPN
Transistor Type 2 NPN (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 65V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "NSVT6"   vaega

O vaega nei e aofia ai  'NSVT6' 

Vaega # Tufuga Vaega Avanoa
NSVT65010MW6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays 2775
NSVT65010MW6T1G ON Semiconductor Arrays BJT Transistors
NSVT65011MW6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays 2563

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