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NSVBC847BLT3G Fa'amatalaga Fa'atekinolosi

NSVBC847BLT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 225mW
Terminal Form GULL WING
Number of Elements 1
Power - Max 225mW
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Frequency - Transition 100MHz
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Reference Standard AEC-Q101
Configuration SINGLE
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 600mV
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Radiation Hardening No
Lead Free Lead Free
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O isi e aofia ai   "NSVBC"   vaega

O vaega nei e aofia ai  'NSVBC' 

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NSVBC114YDXV6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2543
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