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NSV60601MZ4T3G Fa'amatalaga Fa'atekinolosi

NSV60601MZ4T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 800mW
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 600mA, 6A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Base Part Number NSS60601
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 800mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 6A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 100MHz
Turn On Time-Max (ton) 200ns
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "NSV60"   vaega

O vaega nei e aofia ai  'NSV60' 

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