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NSS20101JT1G Fa'amatalaga Fa'atekinolosi

NSS20101JT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case SC-89, SOT-490
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form FLAT
Base Part Number NSS20101
Number of Elements 1
Power Dissipation 300mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage 220mV
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 6V
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 350MHz
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 350MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 20V
Transition Frequency 350MHz
Input Capacitance 40pF
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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