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NSBC123TDP6T5G
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NSBC123TDP6T5G Fa'amatalaga Fa'atekinolosi
Dual NPN Bipolar Digital Transistor (BRT)
Uiga Oloa | Uiga Taua |
---|---|
Category | Discrete Semiconductors / BJT Transistors Arrays |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 8 Weeks |
Mounting Type | Surface Mount |
Surface Mount | YES |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Min Operating Temperature | -55°C |
Subcategory | BIP General Purpose Small Signal |
Terminal Form | FLAT |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 6 |
Number of Elements | 2 |
Element Configuration | Dual |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
Resistor - Base (R1) | 2.2k Ω |
Lead Free | Lead Free |
Uiga Oloa | Uiga Taua |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Package / Case | SOT-963 |
Number of Pins | 6 |
Published | 2010 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Additional Feature | BUILT IN BIAS RESISTOR |
Max Power Dissipation | 339mW |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Base Part Number | NSBC1* |
Qualification Status | Not Qualified |
Polarity | NPN |
Transistor Application | SWITCHING |
Collector Emitter Voltage (VCEO) | 50V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
hFE Min | 160 |
RoHS Status | ROHS3 Compliant |
NSBC123TDP6T5G Pepa
La'u mai i lalo fa'amaumauga ma fa'amaumauga gaosi mo NSBC123TDP6T5G
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Pepa fa'amaumauga
O isi e aofia ai "NSBC1" vaega
O vaega nei e aofia ai 'NSBC1'
Vaega # | Tufuga | Vaega | Avanoa |
---|---|---|---|
NSBC113EDXV6T1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2623 |
NSBC113EDXV6T1 | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EDXV6T1 | Rochester Electronics, LLC | BJT Transistors Arrays | |
NSBC113EDXV6T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2611 |
NSBC113EDXV6T1G | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EDXV6T5 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2510 |
NSBC113EDXV6T5 | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EF3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2570 |
NSBC113EF3T5G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSBC113EPDXV6T1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2569 |
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NSBC123TDP6T5G tagata gaosi oloa: ON Semiconductor, Bonchip fa'asoa, NSBC123TDP6T5G tau faasinomaga. NSBC123TDP6T5G tapula'a, NSBC123TDP6T5G Pepa fa'amaumauga PDF ma pine fa'amatalaga fa'amatalaga download.E mafai ona e fa'aogaina le NSBC123TDP6T5G Pluggable Connectors, DSP Datesseet PDF, su'e NSBC123TDP6T5G pine faʻataʻitaʻiga ma faʻataʻamilosaga faʻataʻitaʻiga ma le faʻaaogaina o le faʻaogaina o le gaioiga, NSBC123TDP6T5G aoaoga faaeletonika.E mafai ona e sii maia mai le Bonchip.
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