NGTB25N120IHLWG Fa'amatalaga Fa'atekinolosi

NGTB25N120IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 192W
Number of Elements 1
Power Dissipation 250W
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.85V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Gate Charge 200nC
Td (on/off) @ 25°C -/235ns
Gate-Emitter Voltage-Max 20V
Height 21.08mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Power - Max 192W
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Turn Off Time-Nom (toff) 475 ns
Current - Collector Pulsed (Icm) 200A
Switching Energy 800μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
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