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NGB8206N Fa'amatalaga Fa'atekinolosi

NGB8206N datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code no
Moisture Sensitivity Level (MSL) 2 (1 Year)
Terminal Finish Tin/Lead (Sn80Pb20)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Rise Time-Max 8000ns
Case Connection COLLECTOR
Power - Max 150W
Polarity/Channel Type N-CHANNEL
Current - Collector (Ic) (Max) 20A
Turn On Time 6500 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 15V
Fall Time-Max (tf) 14000ns
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number NGB8206
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Voltage - Collector Emitter Breakdown (Max) 390V
Power Dissipation-Max (Abs) 150W
Test Condition 300V, 9A, 1k Ω, 5V
Turn Off Time-Nom (toff) 18500 ns
Td (on/off) @ 25°C -/5μs
Gate-Emitter Thr Voltage-Max 2.1V
RoHS Status Non-RoHS Compliant
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