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NDF10N60ZG Fa'amatalaga Fa'atekinolosi

NDF10N60ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Contact Plating Tin
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Pin Count 3
Power Dissipation-Max 39W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 31ns
Vgs (Max) ±30V
Turn-Off Delay Time 40 ns
Threshold Voltage 3.9V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 16.12mm
Width 4.9mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Resistance 650mOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Turn On Delay Time 15 ns
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 40A
Length 10.63mm
Radiation Hardening No
RoHS Status RoHS Compliant
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