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NDD04N50Z-1G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 500V 3A IPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 50μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Rise Time 9ns
Vgs (Max) ±30V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0027Ohm
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 61W
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 308pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 500V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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O isi e aofia ai   "NDD04"   vaega

O vaega nei e aofia ai  'NDD04' 

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