MUN5330DW1T1G Fa'amatalaga Fa'atekinolosi

TRANS PREBIAS NPN/PNP SOT363

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Operating Supply Voltage 50V
Polarity NPN, PNP
Power Dissipation 187mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 50V
hFE Min 3
Continuous Collector Current 100mA
Height 1mm
Width 1.35mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Voltage - Rated DC 50V
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MUN53**DW1
Max Output Current 100mA
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Max Frequency 10kHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Resistor - Base (R1) 1k Ω
Resistor - Emitter Base (R2) 1k Ω
Length 2.2mm
Radiation Hardening No
Lead Free Lead Free
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