MUN5131DW1T1G Fa'amatalaga Fa'atekinolosi

TRANS 2PNP PREBIAS 0.25W SOT363

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity PNP
Power Dissipation 250mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
hFE Min 8
Continuous Collector Current -100mA
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Terminal Form GULL WING
Current Rating -100mA
Base Part Number MUN51**DW1T
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 2.2k Ω
RoHS Status RoHS Compliant
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O isi e aofia ai   "MUN51"   vaega

O vaega nei e aofia ai  'MUN51' 

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