MPS6601G Fa'amatalaga Fa'atekinolosi

MPS6601G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.95
Voltage - Rated DC 25V
Terminal Position BOTTOM
Current Rating 1A
Base Part Number MPS6601
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 600mV
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 25V
hFE Min 50
RoHS Status RoHS Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 600mV
Emitter Base Voltage (VEBO) 4V
Turn On Time-Max (ton) 55ns
Lead Free Lead Free
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O isi e aofia ai   "MPS66"   vaega

O vaega nei e aofia ai  'MPS66' 

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