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MMUN2240LT1G Fa'amatalaga Fa'atekinolosi

NPN Bipolar Digital Transistor (BRT)

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Pin Count 3
Polarity NPN
Power Dissipation 246mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
hFE Min 160
Continuous Collector Current 100mA
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR
Max Power Dissipation 246mW
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 47 k Ω
Radiation Hardening No
Lead Free Lead Free
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O isi e aofia ai   "MMUN2"   vaega

O vaega nei e aofia ai  'MMUN2' 

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