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MMBT5401LT1G Fa'amatalaga Fa'atekinolosi

MMBT5401LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Emitter Base Voltage (VEBO) 5V
Height 940μm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -150V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number MMBT5401
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage -150V
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 160V
hFE Min 50
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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