MMBT2907ALT1G Fa'amatalaga Fa'atekinolosi

MMBT2907ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current -600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage -60V
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Type General Purpose
Voltage - Rated DC -60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
Base Part Number MMBT2907A
Number of Elements 1
Power Dissipation 225mW
Gain Bandwidth Product 200MHz
Collector Emitter Voltage (VCEO) -60V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector (Ic) (Max) 600mA
Collector Emitter Saturation Voltage -400mV
Collector Base Voltage (VCBO) -60V
hFE Min 100
Turn On Time-Max (ton) 45ns
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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