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MJE18002G Fa'amatalaga Fa'atekinolosi

MJE18002G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 50W
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 13MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 1A
Transition Frequency 13MHz
Collector Base Voltage (VCBO) 9V
hFE Min 14
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Voltage - Rated DC 450V
Peak Reflow Temperature (Cel) 260
Frequency 13MHz
Pin Count 3
Number of Elements 1
Power Dissipation 50W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 450V
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 200mA 5V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 450V
Collector Emitter Saturation Voltage 920mV
Emitter Base Voltage (VEBO) 9V
RoHS Status RoHS Compliant
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