MJE170STU Fa'amatalaga Fa'atekinolosi

MJE170STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Operating Temperature 150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.5W
Frequency 50MHz
Number of Elements 1
Power Dissipation 1.5W
Gain Bandwidth Product 50MHz
Transistor Type PNP
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -1.7V
Emitter Base Voltage (VEBO) -7V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -40V
Current Rating -3A
Base Part Number MJE170
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Transition Frequency 50MHz
Collector Base Voltage (VCBO) -60V
hFE Min 50
RoHS Status RoHS Compliant
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O isi e aofia ai   "MJE17"   vaega

O vaega nei e aofia ai  'MJE17' 

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