MJE15035G Fa'amatalaga Fa'atekinolosi

MJE15035G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 50W
Current Rating -4A
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 2W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 350V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
Height 9.28mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -350V
Peak Reflow Temperature (Cel) 260
Frequency 30MHz
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 30MHz
Transistor Type PNP
Max Collector Current 4A
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 350V
hFE Min 100
Length 10.28mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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