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MJD47T4 Fa'amatalaga Fa'atekinolosi

MJD47T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2010
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.56W
Peak Reflow Temperature (Cel) 240
Current Rating 1A
Base Part Number MJD47
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 1V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Transition Frequency 10MHz
Max Breakdown Voltage 250V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 250V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power - Max 15W
Gain Bandwidth Product 10MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 350V
hFE Min 30
Lead Free Lead Free
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O isi e aofia ai   "MJD47"   vaega

O vaega nei e aofia ai  'MJD47' 

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