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MCH6663-TL-W Fa'amatalaga Fa'atekinolosi

MOSFET N/P-CH 30V 1.8/1.5A MCPH6

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case 6-SMD, Flat Leads
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Position DUAL
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 188m Ω @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 1.8A
DS Breakdown Voltage-Min 30V
FET Feature Logic Level Gate, 4V Drive
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 6
Max Power Dissipation 800mW
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Type N and P-Channel
Vgs(th) (Max) @ Id 2.6V @ 1mA
Current - Continuous Drain (Id) @ 25°C 1.8A 1.5A
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 1.5A
Drain-source On Resistance-Max 0.188Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "MCH66"   vaega

O vaega nei e aofia ai  'MCH66' 

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