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MBT2222ADW1T1G Fa'amatalaga Fa'atekinolosi

TRANS 2NPN 40V 0.6A SOT363

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity NPN
Power Dissipation 150mW
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 75V
hFE Min 35
Height 1.1mm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number MBT2222AD
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "MBT22"   vaega

O vaega nei e aofia ai  'MBT22' 

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