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MBRB30H30CT-1G Fa'amatalaga Fa'atekinolosi

MBRB30H30CT-1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Rectifier Diode Array
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Diode Element Material SILICON
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
HTS Code 8541.10.00.80
Terminal Position SINGLE
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 800μA @ 30V
Forward Current 15A
Operating Temperature - Junction -55°C~150°C
Application EFFICIENCY
Max Reverse Voltage (DC) 30V
Number of Phases 1
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Cathode
Height 9.65mm
Width 4.7mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Packaging Tube
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature LOW POWER LOSS
Subcategory Rectifier Diodes
Pin Count 3
Element Configuration Common Cathode
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 480mV @ 15A
Max Reverse Leakage Current 800μA
Max Surge Current 30A
Forward Voltage 550mV
Average Rectified Current 15A
Peak Reverse Current 800μA
Peak Non-Repetitive Surge Current 260A
Max Forward Surge Current (Ifsm) 260A
Length 10.31mm
Radiation Hardening No
Lead Free Lead Free
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