ISL9V5036S3ST Fa'amatalaga Fa'atekinolosi

ISL9V5036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series EcoSPARK®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 360V
Terminal Form GULL WING
Base Part Number ISL9V5036
Number of Elements 1
Power Dissipation 250W
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Max Collector Current 46A
Collector Emitter Saturation Voltage 1.17V
Turn On Time 2800 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A
Gate Charge 32nC
Gate-Emitter Voltage-Max 12V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -40°C~175°C TJ
Published 2017
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Current Rating 46A
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Clamping Voltage 360V
Rise Time 2.1μs
Collector Emitter Voltage (VCEO) 1.6V
Collector Emitter Breakdown Voltage 390V
Max Breakdown Voltage 390V
Test Condition 300V, 1k Ω, 5V
Turn Off Time-Nom (toff) 13600 ns
Td (on/off) @ 25°C -/10.8μs
Gate-Emitter Thr Voltage-Max 2.2V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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