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HUF76407D3ST Fa'amatalaga Fa'atekinolosi

MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 38W
Turn On Delay Time 5 ns
Rise Time 32ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 43 ns
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Input Capacitance 350pF
Drain to Source Resistance 77mOhm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-252-3
Weight 260.37mg
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 92mOhm
Max Operating Temperature 175°C
Subcategory FET General Purpose Power
Max Power Dissipation 38W
Current Rating 11A
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 92 mΩ
REACH SVHC No SVHC
Lead Free Lead Free
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