HUF75652G3 Fa'amatalaga Fa'atekinolosi

HUF75652G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 8mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 515W
Turn On Delay Time 18.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 195ns
Vgs (Max) ±20V
Turn-Off Delay Time 80 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UltraFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Current Rating 75A
Power Dissipation-Max 515W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7585pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 475nC @ 20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 190 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 4 V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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