FQU2N60CTU Fa'amatalaga Fa'atekinolosi

FQU2N60CTU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7 Ω @ 950mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 1.9A
Drain to Source Breakdown Voltage 600V
Height 6.1mm
Width 2.3mm
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.08mg
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 4.7Ohm
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1.9A
Qualification Status Not Qualified
Power Dissipation-Max 2.5W Ta 44W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 7.6A
Length 6.6mm
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "FQU2N"   vaega

O vaega nei e aofia ai  'FQU2N' 

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