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FQU20N06LTU Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 60V 17.2A 3-Pin(3+Tab) IPAK Tube

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.08mg
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 60MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 8.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 17.2A
Drain to Source Breakdown Voltage 60V
Height 6.1mm
Width 2.3mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Current Rating 17.2A
Power Dissipation-Max 2.5W Ta 38W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17.2A Tc
Rise Time 165ns
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 68.8A
Length 6.6mm
Radiation Hardening No
Lead Free Lead Free
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