FQD8P10TM-F085 Fa'amatalaga Fa'atekinolosi

Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 530m Ω @ 3.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±30V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 26.4A
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 530MOhm
Subcategory Other Transistors
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 6.6A
Drain to Source Breakdown Voltage -100V
Radiation Hardening No
Lead Free Lead Free
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