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FQD6N50CTM Fa'amatalaga Fa'atekinolosi

Transistor, Mosfet, N-Channel, 500V V(Br)Dss, 4.5A I(D), To-252Aa

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 4.5A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Rise Time 35ns
Vgs (Max) ±30V
Turn-Off Delay Time 55 ns
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 500V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 4.5A
Drain to Source Breakdown Voltage 500V
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "FQD6N"   vaega

O vaega nei e aofia ai  'FQD6N' 

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FQD6N25TM Fairchild/ON Semiconductor Transistors - FETs, MOSFETs - Single 22621
FQD6N25TM ON Semiconductor Single MOSFETs Transistors
FQD6N40 FAIRCHI Specialized Hot ICs 3774
FQD6N40 MOS Fairchild/ON Semiconductor Specialized Hot ICs 1333

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