FQD19N10TM Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 15.6A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 7.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15.6A Tc
Rise Time 150ns
Vgs (Max) ±25V
Turn-Off Delay Time 20 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 220 mJ
Length 6.6mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 100MOhm
Voltage - Rated DC 100V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 2.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 15.6A
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 62.4A
Height 2.3mm
Width 6.1mm
RoHS Status ROHS3 Compliant
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