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FQB19N20CTM Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 200V 19A D2PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 170mOhm
HTS Code 8541.29.00.95
Voltage - Rated DC 200V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.13W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 19A
Drain to Source Breakdown Voltage 200V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 19A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.13W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Rise Time 150ns
Vgs (Max) ±30V
Turn-Off Delay Time 135 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 76A
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
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