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FJV3115RMTF Fa'amatalaga Fa'atekinolosi

Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Terminal Position DUAL
Current Rating 100mA
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Length 2.92mm
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 30mg
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.54
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Base Part Number FJV3115
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
hFE Min 33
Continuous Collector Current 100mA
Height 930μm
Width 1.3mm
RoHS Status RoHS Compliant
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O isi e aofia ai   "FJV31"   vaega

O vaega nei e aofia ai  'FJV31' 

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