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FDWS9509L-F085 Fa'amatalaga Fa'atekinolosi

PMOS PWR56 40V 8 MOHM

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2017
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 107W Tj
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 65A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 65A
DS Breakdown Voltage-Min 40V
Turn Off Time-Max (toff) 405ns
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 65A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
JEDEC-95 Code MO-240AA
Drain-source On Resistance-Max 0.0153Ohm
Avalanche Energy Rating (Eas) 84 mJ
Turn On Time-Max (ton) 22ns
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