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FDP10N60NZ Fa'amatalaga Fa'atekinolosi

FDP10N60NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 185W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 50ns
Vgs (Max) ±25V
Turn-Off Delay Time 70 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 550 mJ
Length 10.36mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 185W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.75Ohm
Pulsed Drain Current-Max (IDM) 40A
Height 16.07mm
Width 4.9mm
REACH SVHC No SVHC
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