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FDMS8026S Fa'amatalaga Fa'atekinolosi

MOSFET 30V N-Channel PowerTrench SyncFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 74mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®, SyncFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code R-PDSO-F5
Power Dissipation-Max 2.5W Ta 41W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.2 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code MO-240AA
Drain-source On Resistance-Max 0.0043Ohm
Avalanche Energy Rating (Eas) 33 mJ
Height 1.05mm
Width 6mm
REACH SVHC No SVHC
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 41W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 19A Ta 22A Tc
Rise Time 3.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.5 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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