FDMS3669S Fa'amatalaga Fa'atekinolosi

FDMS3669S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 171mg
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-F6
Operating Mode ENHANCEMENT MODE
Power - Max 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.7V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A 18A
Rise Time 3ns
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
Length 5mm
Radiation Hardening No
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
Number of Elements 2
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 60A
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
Height 1.1mm
Width 5.9mm
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "FDMS3"   vaega

O vaega nei e aofia ai  'FDMS3' 

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