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FDMS3615S Fa'amatalaga Fa'atekinolosi

MOSFET DUAL N-Channel PowerTrench MOSFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 90mg
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
Number of Elements 2
Power Dissipation 1W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 5.8m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Fall Time (Typ) 2.2 ns
Continuous Drain Current (ID) 18A
Drain Current-Max (Abs) (ID) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 115 pF
Length 5.1mm
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
JESD-30 Code R-PDSO-N6
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A 18A
Rise Time 3ns
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
FET Feature Logic Level Gate
Height 1.05mm
Width 6.1mm
RoHS Status ROHS3 Compliant
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