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FDME430NT Fa'amatalaga Fa'atekinolosi

MOSFET 30V N-Channel PowerTrench MOSFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Obsolete
Number of Terminations 3
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Ta
Rise Time 3ns
Vgs (Max) ±12V
Turn-Off Delay Time 19 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.04Ohm
Feedback Cap-Max (Crss) 75 pF
Length 1.6mm
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-PowerUFDFN
Weight 30mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
JESD-30 Code S-PDSO-N3
Power Dissipation-Max 2.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 3.3 ns
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 30V
Height 500μm
Width 1.6mm
RoHS Status RoHS Compliant
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O isi e aofia ai   "FDME4"   vaega

O vaega nei e aofia ai  'FDME4' 

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