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FDME1024NZT Fa'amatalaga Fa'atekinolosi

FDME1024NZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad
Weight 25.2mg
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e4
Part Status Active
Number of Terminations 6
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 600mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 15 ns
Threshold Voltage 700mV
Drain Current-Max (Abs) (ID) 3.4A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
Length 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ESD PROTECTION
Max Power Dissipation 1.4W
Element Configuration Dual
Power Dissipation 1.3W
Turn On Delay Time 4.5 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 66m Ω @ 3.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Rise Time 2ns
Fall Time (Typ) 1.7 ns
Continuous Drain Current (ID) 3.8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Height 500μm
Width 1.6mm
REACH SVHC No SVHC
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