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FDMC86139P Fa'amatalaga Fa'atekinolosi

FDMC86139P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Weight 165.33333mg
Operating Temperature -55°C~150°C TJ
Published 2017
JESD-609 Code e4
Part Status Active
Number of Terminations 5
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.3W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 67m Ω @ 4.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1335pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±25V
Turn-Off Delay Time 17 ns
Threshold Voltage -3V
Drain-source On Resistance-Max 0.067Ohm
Pulsed Drain Current-Max (IDM) 30A
Turn Off Time-Max (toff) 40ns
Height 800μm
Width 3.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code S-PDSO-N5
Number of Channels 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.4A Ta 15A Tc
Rise Time 2.5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) -4.4A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -100V
Max Junction Temperature (Tj) 150°C
Turn On Time-Max (ton) 30ns
Length 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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