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FDMC3020DC Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 40A POWER33

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
JESD-30 Code S-PDSO-N5
Power Dissipation-Max 3W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.25m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code MO-240BA
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Height 950μm
Width 3.3mm
REACH SVHC No SVHC
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 32.13mg
Operating Temperature -55°C~150°C TJ
Series Dual Cool™, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Ta 40A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.00625Ohm
Avalanche Energy Rating (Eas) 60 mJ
Length 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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